Overview
MP801 gas sensor is for hydrogen. It adopts multilayer thick film manufacturing technology. The heater and metal oxide semiconductor material on the ceramic substrate of subminiature Al2O3 are fetched out by electrode down-lead, encapsulated in metal socket and cap. Conductivity of the sensor is affected by the concentration of target gas. The higher the concentration is, the higher conductivity of sensor gets. Users can adopt simple circuit to convert variation of conductivity into output signal corresponding to gas concentration.
Key Features
High sensitivity, fast response speed, long service life, and simple application circuit
Applications
Used for hydrogen leakage detection for energy vehicles and hydrogen storage stations
Technical Specifications
| Model | NV921 | ||
| Sensor Type | Semiconductor flat surfaced sensor | ||
| Standard Encapsulation | TO-5 | ||
| Detection Gas | H2 | ||
| Detection range | 100~3000ppm | ||
| Standard circuit | Loop voltage | VC | 5.0V±0.1V DC |
| Heating voltage | VH | 5.0V±0.1V DC | |
| Load resistance | RL | Adjustable | |
| Heating consumption | PH | ≤300mW | |
| Surface resistance | RS | 0.5KΩ~10KΩ(in 1000ppmH2) | |
| Sensitivity(Rs) | 0.2~0.6(H2) Rs1000ppm/Rs100ppm | ||
| Standard condition of testing | Temperature, humidity | 20°C±2°C;65%±5%RH | |
| Standard test circuit | VC/VH :5.0V±0.1V | ||
| Warm-up time | 7 days |
